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  New era for PC memory!


Toshiba, SanDisk promising new era of gigabyte memory chips

Toshiba and SanDisk are promising a new era of gigabyte memory chips following the unveiling of an 8Gb NAND flash memory chip at the International Solid-State Circuits Conference (ISSCC) 2005 in San Francisco.

Built with 70nm process technology, the new NAND flash memory is based on multi-level cell technology that allows two bits of data to be stored in one memory cell and hence doubling the memory capacity.
A combination of burst mode techniques and high read bandwidth delivers a write speed of 6MB/sec and a maximum read speed of 60MB/sec, which, Toshiba and SanDisk say, is 40 per cent faster than today's designs.

The companies say that the 8GB chip size is less than 5 per cent larger than the previous generation of 4GB chips built on a 90nm process. The 146mm square chip has an area density of 6 billion bits or 3 billion transistors per square centimetre or 20 billion transistors per square inch of silicon.
Toshiba and SanDisk plan to put flash memory products based on the new 8Gb NAND flash memory into
 production this summer.

They predict that by 2006 the 8GB chip will become the mainstay of their output. The companies also plan to develop and manufacture a 16GB NAND flash memory IC that stacks two of the 8GB NAND flash memories in a single package.

NAND flash memory products used in a wide range of consumer devices are currently booming. It is estimated that in 2004 sales of NAND products grew 64 per cent and are expected to overtake the older NOR devices in sales revenues by 2007.






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