Toshiba, SanDisk promising new era of gigabyte memory chips
Toshiba and SanDisk are promising a new era of gigabyte memory
chips following the unveiling of an 8Gb NAND flash memory chip
at the International Solid-State Circuits Conference (ISSCC)
2005 in San Francisco.
Built with 70nm process technology, the new NAND flash memory is
based on multi-level cell technology that allows two bits of
data to be stored in one memory cell and hence doubling the
A combination of burst mode techniques and high read bandwidth
delivers a write speed of 6MB/sec and a maximum read speed of
60MB/sec, which, Toshiba and SanDisk say, is 40 per cent faster
than today's designs.
The companies say that the 8GB chip size is less
than 5 per cent larger than the previous generation of 4GB chips
built on a 90nm process. The 146mm square chip has an area
density of 6 billion bits or 3 billion transistors per square
centimetre or 20 billion transistors per square inch of silicon.
Toshiba and SanDisk plan to put flash memory products based on
the new 8Gb NAND flash memory into production this
They predict that by 2006 the 8GB chip will become the mainstay
of their output. The companies also plan to develop and
manufacture a 16GB NAND flash memory IC that stacks two of the
8GB NAND flash memories in a single package.
NAND flash memory products used in a wide range of consumer
devices are currently booming. It is estimated that in 2004
sales of NAND products grew 64 per cent and are expected to
overtake the older NOR devices in sales revenues by 2007.